Power Fujitsu samples 150V GaN-on-Si power transistors

Power Fujitsu samples 150V GaN-on-Si power transistors

2013/07/24

Fujitsu is aiming at telecoms power supplies with a 150V GaN-on-silicon transistor.

Sampling now, the device, called MB51T008A, “enables normally-off operations, and is capable of achieving roughly one half the figure of merit [FOM] of silicon-based power devices with an equivalent breakdown voltage,” said the company. “Fujitsu will be able to offer GaN devices that contribute to smaller, more efficient power supplies for a wide range of fields, from home appliances and ICT equipment to automotive and industrial applications.”

The FOM comes from an on-state resistance of 13mΩ and total gate charge of 16nC.

All GaN power transistors are HEMTs – high electron mobility transistors – a structure that makes use of the fast ’2D electron gas’ possible with GaN, and which was invented at Fujitsu.

The firm is constantly modifying the structure for its HEMT RF power devices to gain more efficiency, and for this switching device has developed “a proprietary gate design that enables normally-off operations”, said Fujitsu, adding: “It is characterised by minimal parasitic inductance and high-frequency operations through the use of WLCSP packaging”.

Gate threshold is +1.8V.

Applications are seen as high-side switches and low-side switches in DC-DC converters within data communications equipment, industrial products, and automobiles. “In addition, because it supports a higher switching frequency in power supply circuits, power supplies can achieve improvements in overall size and efficiency”, said Fujitsu.

Sample quantities of the new product will be made available starting July 2013, the volume production is scheduled to begin in 2014.

In the pipeline are models with breakdown voltages of 600V and 30V.

At Techno-Frontier 2013 in Tokyo last week the firm revealed prototypes of, and test data from, a 2.5kW PSU employing a GaN power device, high-frequency PFC, and high-frequency DC-DC converter, it said.

Fujitsu is unusual in pitching GaN at such low voltages – most firms working in GaN are aiming at applications from 600V to 1,200V – mains, and solar inverters.

At lower voltages, GaN offers higher frequency switching, for smaller passive components, the chance of gaining a few per cent efficiency, or the chance to move to simpler, non-resonant, topologies for the same efficiency compared to silicon. But these advantages are not so clear-cut as at 1,200V.

As GaN is never going to be as cheap as simple silicon mosfets, applications have to be high-end.

One such high-end application would be servers, and in November last year, the company announced 2.5kW server PSU, with a GaN transistor in its power-factor correction (PFC) stage – possibly using a prototype TO247-packaged GaN transistor called MB51T004.

It is unclear whether this is the same 2.5kW PSU as the Tokyo demo.

The firm has established a 6in. (150mm) mass-production line at its Aizu-Wakamatsu plant, originally, in November 2012, predicting full-scale production in the second half of 2013.

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